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1.
Yi Kai Zhou Sung Woo Choi Shigeya Kimura Shuichi Emura Shigehiko Hasegawa Hajime Asahi 《Journal of Superconductivity and Novel Magnetism》2007,20(6):429-432
GaGdN layers were grown at temperatures below 300°C by radio-frequency plasma-assisted molecular beam epitaxy on sapphire
substrates. GaGdN samples with high Gd concentration as high as 12.5% were obtained by lowering the growth temperature. X-ray
diffraction results showed no obvious secondary phase, which means that the phase separation can be suppressed by the growth
at low temperatures. All samples, including those grown at room temperature, showed ferromagnetic characteristics. Photoluminescence
emission was observed, though spectra exhibit broad and sharp luminescence bands related to many kinds of defects. It is suggested
that electrons coming from defects, especially, nitrogen vacancy, stabilize ferromagnetism, and that the carrier-induced ferromagnetism
occurs in the low-temperature-growth GaGdN. 相似文献
2.
RF-MBE生长的AlGaN/GaN高电子迁移率晶体管特性 总被引:4,自引:4,他引:0
用射频分子束外延技术研制出了室温迁移率为10 35 cm2 /(V·s) ,二维电子气浓度为1.0×10 1 3cm- 2 ,77K迁移率为2 6 5 3cm2 /(V·s) ,二维电子气浓度为9.6×10 1 2 cm- 2 的Al Ga N/Ga N高电子迁移率晶体管材料.用此材料研制的器件(栅长为1μm,栅宽为80μm,源-漏间距为4μm )的室温非本征跨导为186 m S/m m,最大漏极饱和电流密度为92 5 m A/m m,特征频率为18.8GHz. 相似文献
3.
4.
The thermal stability of interfaces between metals (Ni, Pt, Ti, Mo) and III-V compound semiconductors has been investigated
by the application of Rutherford backscattering spectrometry. Metal diffusion and interfacial lattice disorder of the semiconductors
were analyzed for various metal/semiconductor samples annealed at temperatures up to 500°C. The interfaces of Ni/GaAs and
Ti/GaAs were found to be more stable than those of Ni/In-based semiconductors and Ti/ In-based semiconductors, respectively.
Faster diffusion of Pt atoms was ob-served in In-and As-containing materials than in P-containing materials. Mo/ semiconductor
interfaces were the most stable. 相似文献
5.
用射频分子束外延技术研制出了室温迁移率为1035cm2/(V·s),二维电子气浓度为1.0×1013cm-2,77K迁移率为2653cm2/(V·s),二维电子气浓度为9.6×1012cm-2的AlGaN/GaN高电子迁移率晶体管材料.用此材料研制的器件(栅长为1μm,栅宽为80μm,源-漏间距为4μm)的室温非本征跨导为186mS/mm,最大漏极饱和电流密度为925mA/mm,特征频率为18.8GHz. 相似文献
6.
7.
阮育娇 《上海电力学院学报》2010,(8)
采用金属键合技术结合激光剥离技术将GaN基LED从蓝宝石衬底成功转移到Si衬底上。利用X射线光电子谱(XPS)研究不同阻挡层对Au向GaN扩散所起的阻挡作用,确定键合所需的金属过渡层。利用多层金属过渡层,在真空、温度400℃和加压300 N下实现GaN基LED和Si的键合,通过激光剥离技术将蓝宝石衬底从键合结构上剥离下来,形成GaN基LED/金属层/Si结构。用金相显微镜及原子力显微镜(AFM)观察结构的表面形貌,测得表面粗糙度(RMS)为12.1 nm。X射线衍射(XRD)和Raman测试结果表明,衬底转移后,GaN基LED的结构及其晶体质量没有发生明显变化,而且GaN与蓝宝石衬底间的压应力得到了释放,使得Si衬底上GaN基LED的电致发光(EL)波长发生红移现象。 相似文献
8.
Anwar Jarndal 《国际射频与微波计算机辅助工程杂志》2013,23(2):149-156
An accurate equivalent circuit large‐signal model (ECLSM) for AlGaN‐GaN high electron mobility transistor (HEMT) is presented. The model is derived from a distributed small‐signal model that efficiently describes the physics of the device. A genetic neural‐network‐based model for the gate and drain currents and charges is presented along with its parameters extraction procedure. This model is embedded in the ECLSM, which is then implemented in CAD software and validated by pulsed and continuous large‐signal measurements of on‐wafer 8 × 125‐μm GaN on SiC substrate HEMT. Pulsed IV simulations show that the model can efficiently describe the bias dependency of trapping and self‐heating effects. Single‐ and two‐tone simulation results show that the model can accurately predict the output power and its harmonics and the associated intermodulation distortion (IMD) under different input‐power and bias conditions. © 2012 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2013. 相似文献
9.
Byoung-Gue Min Jong-Min Lee Hyung Sup Yoon Woo-Jin Chang Jong-Yul Park Dong Min Kang Sung-Jae Chang Hyun-Wook Jung 《ETRI Journal》2023,45(1):171-179
We have developed an InAlAs/InGaAs metamorphic high electron mobility transistor device fabrication process where the gate length can be tuned within the range of 0.13 μm–0.16 μm to suit the intended application. The core processes are a two-step electron-beam lithography process using a three-layer resist and gate recess etching process using citric acid. An electron-beam lithography process was developed to fabricate a T-shaped gate electrode with a fine gate foot and a relatively large gate head. This was realized through the use of three-layered resist and two-step electron beam exposure and development. Citric acid-based gate recess etching is a wet etching, so it is very important to secure etching uniformity and process reproducibility. The device layout was designed by considering the electrochemical reaction involved in recess etching, and a reproducible gate recess etching process was developed by finding optimized etching conditions. Using the developed gate electrode process technology, we were able to successfully manufacture various monolithic microwave integrated circuits, including low noise amplifiers that can be used in the 28 GHz to 94 GHz frequency range. 相似文献
10.
L波段功率单管有增大功率的需求,但会面临体积较大的问题。基于0.5μm工艺研发了GaN高电子迁移率晶体管(HEMT)管芯,单芯功率达到300 W。通过负载牵引仿真提取模型的输入、输出最佳阻抗点。用高介电常数薄膜电路设计L-C网络,拉高芯片的输入输出阻抗,并抵消虚部。用微带电路设计两级阻抗变换的宽带功率分配器及合路器电路,进行四胞管芯合成。内置稳定电路、栅极和漏极供电偏置电路,实现高度集成化、小型化,以及50Ω输入输出阻抗匹配。芯片总栅宽4×40 mm,在漏压50 V、脉宽40μs、占空比4%的测试条件下,在0.96 GHz到1.225 GHz的宽带频段内,输出功率为60 dBm到61.2 dBm,效率为57.9%到72%,饱和功率增益大于14 dB。 相似文献